Low Noise Amplifier for Capacitive Detectors
نویسندگان
چکیده
As a design study for the LHC experiments a 'Low Noise Amplifier Shaper' for capacitive detectors is developed. This amplifier is designed in 0.6 um CMOS technology from AMS. The goal was to design an amplifier with a noise contribution of 250 electrons, and 12 electrons per pF contribution from the input capacitor and a relative high gain. A test chip with two versions of the amplifier, a 'radiation tolerant' (gate-around FET's) and a 'rectangular' version has been fabricated and is now under test. These designs, and there characteristics, simulated and measured, will be compared and discussed.
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